Advanced High Voltage Power Device Concepts by B. Jayant Baliga

By B. Jayant Baliga

The units defined in “Advanced MOS-Gated Thyristor techniques” are used in microelectronics construction apparatus, in strength transmission gear, and for extraordinarily excessive strength motor keep an eye on in electrical trains, steel-mills, and so forth. complicated suggestions that permit enhancing the functionality of strength thyristors are mentioned the following, in addition to units with blocking off voltage features of 5,000-V, 10,000-V and 15,000-V. during the publication, analytical types are generated to permit an easy research of the buildings and to acquire perception into the underlying physics. the result of two-dimensional simulations are supplied to corroborate the analytical versions and provides better perception into the equipment operation.

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The simple construction of these structures using P-N junctions enabled commercialization of devices in the 1950s. These devices were found to be attractive from an applications viewpoint because they eliminated the need for the cumbersome filaments required in vacuum tubes and were much more rugged and smaller in size. The power thyristor provides both forward and reverse voltage blocking capability, making it well suited for AC power circuit applications. The device can be triggered from the forward-blocking off-state to the on-state by using a relatively small gate control current.

The switching losses are much smaller for the 4H-SiC JBS rectifier but it has a very high on-state voltage drop. The most promising option is the high voltage 4H-SiC MPS rectifier which has an on-state voltage drop similar to the P-i-N rectifier but a much lower reverse recovery power loss [19]. 5 Conclusions The applications for high voltage (>5,000 V) power devices have been reviewed in this chapter. These devices are required in motor control for traction, and for power transmission and distribution applications.

J. 1007/978-1-4614-0269-5_2, # Springer Science+Business Media, LLC 2011 21 22 2 Silicon Thyristors Thyristor Current Rating (kA) 5 Adventof ofNTD NTD Advent 4 3 2 1 0 1950 1960 1970 1980 1990 2000 Year Fig. 1 Growth in current ratings for the thyristor The ability to control operation between the blocking and on states for a thyristor by using a third terminal was first reported in the 1950s [2, 3]. The extensive application potential for these devices to home appliances and power distribution systems generated strong interest in making improvements in the power ratings for the thyristors.

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